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| NTHD3101FT1资料 | |
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NTHD3101FT1 PDF Download |
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File Size : 116 KB
Manufacturer:ON Description:System Reliability: Battery-backed SRAM is inherently vulnerable to shock and vibration. In addition, a negative voltage, even a momentary undershoot, on any pin of a battery-backed SRAM can cause data loss. The negative voltage causes current to be drawn directly from the battery, weakens the battery, and reduces its capacity over time. In general, there is no way to monitor the lost battery capacity. MRAM guarantees reliable operation across the voltage range with inherent nonvolatility. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：NTHD3101FT1 厂 家：ON 封 装：SOT-23-8 批 号：0539+ 数 量：717 说 明：绝对全新原装大量现货，质量保证，欢迎来电查询 |
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运 费： 所在地： 新旧程度： |
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| 联系人：李利媛 |
| 电 话：0755/83019596,83247541,83247486 |
| 手 机：13480648723 |
| QQ：1104562168,1178139673,1113496577,2881934444,2881943289,2881943290 |
| MSN：ao-liteng01@hotmail.com,ao-liteng02@hotmail.com,ao-liteng03@hotmail.com,ao-liteng04@hotmail.com |
| 传 真：0755-83016216 |
| EMail：aoliteng1@163.com |
| 公司地址： 广东省深圳市福田区振兴西路新欣大厦B座518室 |
