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MMBT3904LTI

MMBT3904LTI资料
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File Size : 116 KB Manufacturer:ON Description:DESCRIPTION The MMBT3904LTI is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by- Word basis using a 1.65V to 2.2V V DD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated inter- nally. The device supports asynchronous page mode from all the blocks of the memory array. The array matrix organization allows each block to be erased and reprogrammed without affecting other blocks. All blocks are protected against pro- gramming and erase at Power Up. Blocks can be unprotected to make changes in the application and then reprotected. Instructions for Read/Reset, Auto Select, Write Configuration Register, Programming, Block Erase, Bank Erase, Erase Suspend, Erase Re- sume, Block Protect, Block Unprotect, Block Lock- ing, CFI Query, are written to the memory through a Command Interface using standard micropro- cessor write timings. The device is offered in TSOP48 (12 x 20 mm) and in FBGA48 0.75 mm ball pitch packages. When shipped all bits of the MMBT3904LTI device are at the logical level 1. Organization The MMBT3904LTI is organized as 512Kb x16 bits. A0-A18 are the address lines, DQ0-DQ15 are the Data Input/Output. Memory control is provided by Chip Enable E, Output Enable G and Write Enable W inputs.

	1PCS	100PCS	1K	10K
价格


型号：MMBT3904LTI 厂家：ON 封装：批号：09+ 数量：30000 说明：全新原装正品现货，专业供应


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