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| DCB010-TA资料 | |
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DCB010-TA PDF Download |
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File Size : 116 KB
Manufacturer:ROHM Description: The TC55VBM416AFTN is a 16,777,216-bit static random access memory (SRAM) organized as 1,048,576 words by 16 bits/2,097,152 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 0.9 µA standby current (at VDD = 3 V, Ta = 25C, typical) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40 to 85C, the TC55VBM416AFTN can be used in environments exhibiting extreme temperature conditions. The TC55VBM416AFTN is available in a plastic 48-pin thin-small-outline package (TSOP). |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：DCB010-TA 厂 家：ROHM 封 装：SOT-23 批 号： 数 量：78 说 明：绝对全新原装大量现货，质量保证，欢迎来电查询 |
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运 费： 所在地： 新旧程度： |
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| 联系人：李利媛 |
| 电 话：0755/83019596,83247541,83247486 |
| 手 机：13480648723 |
| QQ：1104562168,1178139673,1113496577,2881934444,2881943289,2881943290 |
| MSN：ao-liteng01@hotmail.com,ao-liteng02@hotmail.com,ao-liteng03@hotmail.com,ao-liteng04@hotmail.com |
| 传 真：0755-83016216 |
| EMail：aoliteng1@163.com |
| 公司地址： 广东省深圳市福田区振兴西路新欣大厦B座518室 |
