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| 74HCT688D资料 | |
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74HCT688D PDF Download |
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File Size : 116 KB
Manufacturer:PHILIPS Description: . . . employing the Schottky Barrier principle in a large area metalCtoCsilicon power diode. StateCofCtheCart geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in lowCvoltage, highCfrequency inverters, free wheeling diodes, and polarity protection diodes. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：74HCT688D 厂 家：PHILIPS 封 装：2 批 号：09+ 数 量：30000 说 明：全新原装正品现货，专业供应 |
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运 费： 所在地： 新旧程度： |
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| 联系人：李利媛 |
| 电 话：0755/83019596,83247541,83247486 |
| 手 机：13480648723 |
| QQ：1104562168,1178139673,1113496577,2881934444,2881943289,2881943290 |
| MSN：ao-liteng01@hotmail.com,ao-liteng02@hotmail.com,ao-liteng03@hotmail.com,ao-liteng04@hotmail.com |
| 传 真：0755-83016216 |
| EMail：aoliteng1@163.com |
| 公司地址： 广东省深圳市福田区振兴西路新欣大厦B座518室 |
